Title :
Accurate prediction of large-signal harmonic distortion in gallium nitride HEMTs
Author :
Rodenbeck, C.T. ; Follmann, R.
Author_Institution :
Sandia Nat. Labs.
Abstract :
A nonlinear device modelling methodology capable of accurately predicting large-signal harmonic distortion in gallium nitride (GaN) HEMTs is presented. Harmonic balance simulation predicts the correct load target for maximum output power, with good agreement between measured and simulated load-pull data at 8 GHz. Fundamental output power at 8 GHz as well as second- and third-order harmonic distortion products at 16 and 24 GHz, respectively, are precisely predicted into 10 dB compression for a 2 W 150 mum GaN transistor
Keywords :
III-V semiconductors; gallium compounds; harmonic distortion; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 150 micron; 16 GHz; 2 W; 24 GHz; 8 GHz; GaN; HEMT; harmonic balance simulation; large-signal harmonic distortion; nonlinear device modelling methodology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070911
