DocumentCode :
855757
Title :
Conditions for a temperature compensated silicon field effect transistor
Author :
Hoerni, J.A. ; Weir, B.
Volume :
51
Issue :
7
fYear :
1963
fDate :
7/1/1963 12:00:00 AM
Firstpage :
1058
Lastpage :
1059
Keywords :
Conductivity; Doping profiles; Electronic switching systems; FETs; Geometry; Photonic band gap; Scattering parameters; Silicon; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2424
Filename :
1444354
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=855757
