DocumentCode :
855766
Title :
A unipolar structure applying lateral diffusion
Author :
O´Neil, D.
Volume :
51
Issue :
7
fYear :
1963
fDate :
7/1/1963 12:00:00 AM
Firstpage :
1059
Lastpage :
1060
Keywords :
Aerospace materials; Boron; Capacitance; Doppler radar; Etching; FETs; Fabrication; Lead compounds; Silicon devices; Strips;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2425
Filename :
1444355
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=855766
