Title :
Optimisation of high power AlGaInP laser diodes for optical storage applications
Author :
Elliott, S.N. ; Smowton, P.M. ; Berry, G.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ.
fDate :
12/1/2006 12:00:00 AM
Abstract :
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18deg. T0 is increased from 51 to 65 K (20-70degC) for the expanded mode structure for 320-mum long devices with uncoated facets. It is also found that zinc or magnesium can be used interchangeably for the p-dopant in a given structure without any impact on device performance
Keywords :
III-V semiconductors; aluminium compounds; digital versatile discs; gallium compounds; indium compounds; laser beam applications; laser modes; magnesium; semiconductor doping; semiconductor lasers; zinc; 20 to 70 degC; 320 mum; 51 to 65 K; AlGaInP; AlGaInP laser diode; AlGaInP:Mg; AlGaInP:Zn; DVD read-write applications; confinement factor; expanded mode design; high power laser diode; laser design; optical storage; p-dopant; uncoated facets; vertical farfield divergence;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20060050
