Title :
A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail
Author :
Hsu, M.J. ; Esener, S.C. ; Finkelstein, H.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, San Diego, La Jolla, CA
fDate :
6/1/2009 12:00:00 AM
Abstract :
Single-photon avalanche diodes (SPADs) measure individual photons´ time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly reducing SPAD jitter using an area-efficient shallow-trench-isolation guard ring. The structure prevents lateral drift and diffusion of charge carriers, resulting in improved timing resolution. Experimental results of the device, fabricated in a 0.18-mum CMOS technology, are presented. The timing resolution of the SPAD is 27-ps full-width at half-maximum. Importantly, the diffusion tail exhibits only 96-ps full-width at hundredth-maximum, a three times improvement over previously published SPAD results. The reduced jitter can be translated to improved bit error rates in quantum key distribution systems, faster bit rates in pulse position modulation optical links, and greater contrast in high-resolution fluorescence lifetime imaging microscopy.
Keywords :
CMOS integrated circuits; avalanche photodiodes; carrier lifetime; error statistics; isolation technology; jitter; CMOS STI-bound single-photon avalanche diode; CMOS technology; SPAD jitter; area-efficient shallow-trench-isolation guard ring; bit error rate; charge carrier diffusion; diffusion tail reduction; high-resolution fluorescence lifetime imaging microscopy; photons time-of-arrival; pulse position modulation optical link; quantum key distribution system; size 0.18 mum; time 27 ps; time 96 ps; CMOS technology; Charge carriers; Detectors; Diodes; Jitter; Optical microscopy; Pulse modulation; Tail; Time measurement; Timing; Avalanche breakdown; avalanche photodiodes; cryptography; fluorescence; jitter; pulse position modulation; silicon radiation detectors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2019974