DocumentCode
85601
Title
GaN Nanowire Field Emitters With the Adsorption of Au Nanoparticles
Author
Tsai, Tsung-Yen ; Chang, S.-J. ; Weng, Wen-Yin ; Li, Sinan ; Liu, Siyuan ; Hsu, Cheng-Liang ; Hsueh, Han-Ting ; Hsueh, Ting-Jen
Author_Institution
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan
Volume
34
Issue
4
fYear
2013
fDate
Apr-13
Firstpage
553
Lastpage
555
Abstract
We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.
Keywords
Adsorption; Gallium nitride; Gold; Light emitting diodes; Nanoparticles; Nanoscale devices; X-ray scattering; Au nanoparticle; GaN; field emission; nanowires;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2247558
Filename
6476631
Link To Document