Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the Subthreshold Region

Author

Wei, Chengqing ; Xiong, Yong-Zhong ; Zhou, Xing ; Singh, Navab ; Rustagi, Subhash C. ; Lo, Guo Qiang ; Kwong, Dim-Lee

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

30

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

668

Lastpage

671

Abstract

The low-frequency noise (LFN) in the subthreshold region of both n- and p-type gate-all-around silicon nanowire transistors (SNWTs) is investigated. The measured drain-current noise spectral density shows that the LFN in this regime can be well described by the mobility-fluctuation model due to the volume-inversion conduction behavior, and the Hooge parameter is extracted. The LFN in the SNWTs with channels oriented in lang010rang and lang110rang directions is compared. It shows that the observed mobility enhancement in the lang010rang direction for p-type transistors leads to a corresponding increase of the LFN level in the lang010rang direction compared with that in the lang110rang direction.

Keywords

1/f noise; MOSFET; carrier mobility; nanoelectronics; nanowires; semiconductor device models; semiconductor device noise; silicon; 1/f noise; Hooge parameter extraction; Si; drain-current noise spectral density; low-frequency noise; mobility enhancement; mobility-fluctuation model; p-type gate-all-around SNWT; silicon nanowire MOSFET; subthreshold region; volume inversion; volume-inversion conduction behavior; Gate-all-around (GAA); low-frequency $( hbox{1}/f)$ noise; silicon nanowire; volume inversion;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2019975

Filename

4914834