DocumentCode :
856063
Title :
Effects of gamma radiation on reversed-biased silicon junctions
Author :
Kerr, D.R.
Volume :
51
Issue :
8
fYear :
1963
Firstpage :
1142
Lastpage :
1142
Keywords :
Degradation; Diodes; Gamma rays; Ionizing radiation; Lead compounds; Leakage current; Passivation; Pollution measurement; Silicon compounds; Testing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2453
Filename :
1444383
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=856063
