DocumentCode :
856145
Title :
Some properties of InP lasers
Author :
Burns, Gabbie ; Levitt, R.S. ; Nathan, M.I. ; Weiser, K.
Volume :
51
Issue :
8
fYear :
1963
Firstpage :
1148
Lastpage :
1149
Keywords :
Current measurement; Density measurement; Gallium arsenide; Indium phosphide; Semiconductor lasers; Shape; Spontaneous emission; Stimulated emission; Temperature dependence; Threshold current;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2460
Filename :
1444390
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=856145
