DocumentCode
856215
Title
High-tilt-angle boron implantation into polycrystalline Si gates
Author
Suzuki, Kunihiro ; Kataoka, Yuji
Author_Institution
Fujitsu Labs. Ltd., Kanagawa, Japan
Volume
51
Issue
1
fYear
2004
Firstpage
136
Lastpage
140
Abstract
We ion-implanted B into 400-nm-thick polycrystalline Si and evaluated the profiles. The ion-implanted profiles were almost the same for tilt angles of 0° and 7°. The channeling tail was more significant than the profile in crystalline Si with a tilt of 0°. The channeling phenomenon was significantly suppressed by high-tilt angles because ions cross grain boundaries. We succeeded in expressing these prominent profiles through using an analytical model.
Keywords
elemental semiconductors; ion implantation; semiconductor junctions; silicon compounds; tunnelling; channeling phenomenon; channeling tail; grain boundaries; high-tilt-angle boron implantation; ion-implantation; polycrystalline silicon gates; Amorphous materials; Analytical models; Boron; Crystallization; Grain boundaries; Grain size; Impurities; Ion implantation; MOSFETs; Tail;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.821386
Filename
1258156
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