DocumentCode :
856225
Title :
Efficacy of charge sharing in reshaping the surface electric field in high-voltage lateral RESURF devices
Author :
Imam, Mohamed ; Quddus, Mohammed ; Adams, Jim ; Hossain, Zia
Author_Institution :
ON Semicond., Phoenix, AZ, USA
Volume :
51
Issue :
1
fYear :
2004
Firstpage :
141
Lastpage :
148
Abstract :
A simple one-dimensional (1-D) analytical solution method for analyzing and determining the breakdown properties of reduced surface field (RESURF) lateral devices is presented. The solution demonstrates quantitatively and qualitatively the reshaping and reduction of the electric field and its dependence on the device/process key parameters. The solution is based on a simple and physical charge-sharing approach that takes into account the modulation of the lateral depletion layer spreading caused by the vertical depletion extension, and therefore transforms the inherent two-dimensional effects into a simple 1-D equivalent. It also provides a reasonable insight on the breakdown voltage sensitivity of lateral RESURF devices to key device/process parameters that other researchers failed to provide. Using the technique, device designers can set and choose the optimal processing window of the device´s critical layers to yield high breakdown voltages. The results obtained using the proposed solution method agree well with the experimental and simulation results.
Keywords :
power MOSFET; semiconductor device breakdown; semiconductor device models; breakdown properties; breakdown voltage sensitivity; breakdown voltages; charge sharing; critical layers; electric field reduction; electric field reshaping; high-voltage lateral RESURF devices; lateral depletion layer; optimal processing window; physical charge-sharing; reduced surface field lateral devices; surface electric field; vertical depletion extension; Breakdown voltage; Costs; Design optimization; Electric breakdown; Logic devices; Monolithic integrated circuits; Power integrated circuits; Semiconductor device doping; Semiconductor diodes; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.821383
Filename :
1258157
Link To Document :
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