Title :
Hole-well antimonide laser diodes on GaSb operating near 2.93 μm
Author :
Cerutti, L. ; Boissier, G. ; Grech, P. ; Perona, A. ; Angellier, J. ; Rouillard, Y. ; Kaspi, R. ; Genty, F.
Author_Institution :
Univ. of Montpellier
Abstract :
The operation of electrically-pumped type-II Sb-based laser diodes in which only the holes are quantum confined is reported. These laser structures were fabricated by molecular beam epitaxy on (001) GaSb substrates. In the multi-quantum well region, radiative recombinations originate from InGaSb hole wells embedded in InGaAsSb barriers lattice-matched to GaSb. Laser operation was demonstrated from such structures up to 243 K at 2.93 mum in the pulsed regime (200 ns, 5 kHz). A minimum threshold of about 12.8 kW/cm2 combined with a T0 around 70 K have been measured
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; substrates; (001) substrate; 2.93 micron; 200 ns; 5 kHz; InGaSb-InGaAsSb; hole-well laser diodes; laser structures; molecular beam epitaxy; multiquantum well region; quantum confinement; radiative recombinations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062753
