• DocumentCode
    856564
  • Title

    Monolithically integrated 10 Gbit=s photodiode and transimpedance amplifier in thin-film SOI CMOS technology

  • Author

    Afzalian, A. ; Flandre, D.

  • Author_Institution
    Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
  • Volume
    42
  • Issue
    24
  • fYear
    2006
  • Firstpage
    1420
  • Lastpage
    1421
  • Abstract
    The first monolithically integrated photodiode and transimpedance amplifier in ultra-thin-film SOI technology for 10 Gbit/s short-distance optical communication is presented. Results indicate performances compatible with the application, at very low power consumption, chip area and cost, using an all-silicon receiver in a 0.13 mum SOI CMOS technology
  • Keywords
    CMOS integrated circuits; amplifiers; integrated optoelectronics; optical receivers; photodiodes; silicon-on-insulator; 0.13 micron; 10 Gbit/s; SOI CMOS technology; all-silicon receiver; photodiode; short-distance optical communication; transimpedance amplifier; ultra-thin-film SOI technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062563
  • Filename
    4027927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=856564