Title :
RF knee walkout and source access region of unpassivated HFETs
Author :
Bilbro, G.L. ; Trew, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC
Abstract :
A simple circuit model is used for the source access region of an AlGaN/GaN HFET in a microwave power amplifier to show that the interaction between gate-to-source surface current and 2DEG conductivity by itself can produce RF knee walkout
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave power amplifiers; semiconductor device models; wide band gap semiconductors; 2DEG conductivity; AlGaN-GaN; RF knee walkout; gate-to-source surface current; heterostructure field effect transistor; microwave power amplifier; source access region; unpassivated HFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062113
