DocumentCode :
856665
Title :
Continuous stimulated emission from GaAs diodes at 77°K
Author :
Pilkuhn, M. ; Rupprecht, H. ; Woodall, J.
Author_Institution :
IBM Corp., T. J. Watson Research Center, Yorktown Heights, N. Y.
Volume :
51
Issue :
9
fYear :
1963
Firstpage :
1243
Lastpage :
1243
Abstract :
A study was undertaken for preparing low threshold GaAs laser materials. Optimum results were obtained by using boat grown GaAs (Te doped with an electron concentration of 1-2 xlO18cm-3). Extremely planar junctions resulted from diffusing Zn out of ZnAs2 source into the n-type substrates at 85O°C for 24 hours. Large area contacts giving uniform current distribution were found essential for low thresholds.
Keywords :
Current density; Diodes; Electrons; Fabry-Perot; Frequency; Gallium arsenide; Optical materials; Stimulated emission; Tellurium; Zinc;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2505
Filename :
1444435
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=856665
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