Title :
Demonstration of Bias-Controlled Algorithmic Tuning of Quantum Dots in a Well (DWELL) MidIR Detectors
Author :
Jang, Woo-Yong ; Hayat, Majeed M. ; Tyo, J. Scott ; Attaluri, Ram S. ; Vandervelde, Thomas E. ; Sharma, Yagya D. ; Shenoi, Rajeev ; Stintz, Andreas ; Cantwell, Elizabeth R. ; Bender, Steven C. ; Lee, Sang Jun ; Noh, Sam Kyu ; Krishna, Sanjay
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM
fDate :
6/1/2009 12:00:00 AM
Abstract :
The quantum-confined Stark effect in intersublevel transitions present in quantum-dots-in-a-well (DWELL) detectors gives rise to a midIR spectral response that is dependent upon the detector´s operational bias. The spectral responses resulting from different biases exhibit spectral shifts, albeit with significant spectral overlap. A postprocessing algorithm was developed by Sakoglu that exploited this bias-dependent spectral diversity to predict the continuous and arbitrary tunability of the DWELL detector within certain limits. This paper focuses on the experimental demonstration of the DWELL-based spectral tuning algorithm. It is shown experimentally that it is possible to reconstruct the spectral content of a target electronically without using any dispersive optical elements for tuning, thereby demonstrating a DWELL-based algorithmic spectrometer. The effects of dark current, detector temperature, and bias selection on the tuning capability are also investigated experimentally.
Keywords :
Stark effect; dark conductivity; infrared detectors; quantum dots; quantum wells; arbitrary tunability; bias-controlled algorithmic tuning; dark current; intersublevel transitions; midIR detectors; quantum dots; quantum-confined Stark effect; Detectors; Dispersion; Educational technology; Laboratories; Materials science and technology; Optical sensors; Optical tuning; Quantum dots; Spectroscopy; Temperature sensors; Algorithmic spectrometer; quantum-dots-in-a-well (DWELL) detectors; spectral sensors; spectral tuning;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2013150