• DocumentCode
    856917
  • Title

    Novel semiconductor substrate for high-speed integrated circuit manufacture

  • Author

    Jianming Li

  • Author_Institution
    Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
  • Volume
    25
  • Issue
    21
  • fYear
    1989
  • Firstpage
    1431
  • Lastpage
    1432
  • Abstract
    High-resistivity layers formed beneath silicon surface layers by using proton implantation and annealing are described. Three-step annealing is suggested to form a buried layer of higher resistivity. Experiments show that the quality of the top layers has been improved, with an increase in surface mobility.
  • Keywords
    annealing; carrier mobility; elemental semiconductors; integrated circuit manufacture; ion implantation; silicon; annealing; buried layer; integrated circuit manufacture; proton implantation; surface mobility; top layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890955
  • Filename
    46227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=856917