Title :
Novel semiconductor substrate for high-speed integrated circuit manufacture
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
High-resistivity layers formed beneath silicon surface layers by using proton implantation and annealing are described. Three-step annealing is suggested to form a buried layer of higher resistivity. Experiments show that the quality of the top layers has been improved, with an increase in surface mobility.
Keywords :
annealing; carrier mobility; elemental semiconductors; integrated circuit manufacture; ion implantation; silicon; annealing; buried layer; integrated circuit manufacture; proton implantation; surface mobility; top layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890955
