Title :
Plasma-hydrogenated low-threshold wide-band 1.3 mu m buried ridge structure laser
Author :
Kazmierski, C. ; Theys, B. ; Rose, B. ; Mircea, A. ; Jalil, Abdul ; Chevallier, J.
Author_Institution :
CNET, Bagneux, France
Abstract :
The plasma hydrogenation of p-type InP has been applied to the fabrication of buried ridge structure (BRS) lasers. The threshold current, output power and modulation bandwidth of the obtained devices compare favourably with those of more conventional ones fabricated by proton implantation on the same wafer.
Keywords :
III-V semiconductors; diffusion in solids; hydrogen; indium compounds; semiconductor junction lasers; 1.3 micron; InP; buried ridge structure laser; modulation bandwidth; output power; plasma hydrogenation; proton implantation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890957
