A fully integrated differential CMOS LNA for 3-5-GHz ultrawideband wireless receivers

Author

Bevilacqua, A. ; Sandner, C. ; Gerosa, A. ; Neviani, A.

Author_Institution

Dipt. di Ingegneria dell´Informazione, Univ. di Padova

Volume

16

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

134

Lastpage

136

Abstract

A fully integrated differential low-power low-noise amplifier (LNA) for ultrawideband (UWB) systems operating in the 3-5-GHz frequency range is presented. A two-section LC ladder input network is exploited to achieve excellent input match in a wideband fashion and to optimize the noise performance. Prototypes fabricated in a digital 0.13-mum complementary metal oxide semiconductor technology show the following performance: 9.5-dB peak power gain, 3.5-dB minimum noise figure, -6-dBm input-referred 1-dB compression point, and -0.8-dBm input-referred third-order intercept point, while drawing 11mA from a 1.5-V supply. The realized LNA is compared with previously reported LNAs tailored for the same frequency range

Keywords

CMOS integrated circuits; MMIC amplifiers; differential amplifiers; integrated circuit noise; low noise amplifiers; microwave receivers; radio receivers; ultra wideband communication; 0.13 micron; 1 dB; 1.5 V; 11 mA; 3 to 5 GHz; 3.5 dB; 9.5 dB; CMOS technology; LNA; UWB; differential CMOS; integrated differential low-power amplifier; ladder input network; low-noise amplifier; minimum noise figure; peak power gain; ultra wideband system; ultra wideband wireless receiver; Active noise reduction; Bandwidth; CMOS technology; Frequency; Impedance matching; Low-noise amplifiers; Performance gain; Prototypes; Semiconductor device noise; Ultra wideband technology; Complementary metal oxide semiconductor (CMOS); low-noise amplifier (LNA); ultrawideband (UWB);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.869855

Filename

1603590