Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs

Author

Teng Zhan ; Yang Zhang ; Jun Ma ; Ting Tian ; Jing Li ; Zhiqiang Liu ; Xiaoyan Yi ; Jinxia Guo ; Guohong Wang ; Jinmin Li

Author_Institution

Semicond. Lighting Technol. R&D Center, Inst. of Semicond., Beijing, China

Volume

25

Issue

9

fYear

2013

fDate

1-May-13

Firstpage

844

Lastpage

847

Abstract

In this letter, GaN-based high-voltage light-emitting diodes (HV-LEDs) arrays with 16 microchips connected in series are fabricated. The light output power-current-voltage (LOP-I-V) characteristic of HV-LEDs is measured. Under input power of 1.1 W, the LOP of HV-LEDs is enhanced by 11.9% compared to traditional high power light-emitting diodes (THP-LEDs) with the same chip size. Due to the reduced metal shadow effect and better current spread, the HV-LEDs exhibit higher light extraction efficiency under the same current density, which is simulated by a 3-D ray tracing method. As a result, the luminous efficiency of HV-LEDs is 21.6% higher than that of THP-LEDs under input power of 1.1 W. Furthermore, the efficiency droop of HV-LEDs is reduced to half of that of THP-LEDs.

Keywords

III-V semiconductors; current density; gallium compounds; light emitting diodes; ray tracing; wide band gap semiconductors; 3D ray tracing method; GaN; current density; current spread; efficiency droop; high power light emitting diodes; high voltage LED; light extraction efficiency; luminous efficiency; metal shadow effect; power 1.1 W; Current density; Electrodes; Etching; Gallium nitride; Light emitting diodes; Lighting; Metals; Array; GaN; efficiency droop; high-voltage (HV); light emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2251878

Filename

6476641