Source-Pull and Load-Pull Characterization of Graphene FET

Author

Fregonese, Sebastien ; De Matos, Magali ; Mele, D. ; Maneux, Cristell ; Happy, H. ; Zimmer, T.

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

Volume

3

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

49

Lastpage

53

Abstract

This paper presents the characterization of a GFET transistor using a source-pull/load-pull test set. The characterization shows that despite the good f_T and f_MAX, it is hard to achieve power gain using the GFET device within a circuit configuration. This is due to the very high impedance at the gate making impedance matching at the input extremely difficult. S-parameter characterization is performed and the associated small signal model is developed in order to further analyse and extrapolate the source-pull and load-pull measurement results. A good agreement is observed between small signal model simulation results and source-pull/load-pull measurements. Finally, the model is used to evaluate the optimum power gain of the transistor in a circuit configuration under matched conditions.

Keywords

S-parameters; field effect transistors; graphene devices; impedance matching; semiconductor device models; GFET transistor; S-parameter characterization; graphene FET; impedance matching; load-pull measurements; optimum power gain; small signal model; source-pull measurements; source-pull-load-pull test set; Gain; Graphene; Impedance matching; Load modeling; Solid modeling; Transistors; Tuners; Circuit design; FET; Graphene; circuit design; impedance matching; load-pull; small-signal model; source-pull;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2014.2360408

Filename

6910223