Title :
Progress toward solid-state local oscillators at 1 THz
Author :
Crowe, Thomas W. ; Grein, Thomas C. ; Zimmermann, Rüdiger ; Zimmermann, Peter
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
A varactor tripler to 800 GHz with 250 mW output power is reported. This tripler uses a new GaAs Schottky diode which has been optimized for high frequency applications. It features a smaller anode diameter and higher epitaxial doping density than previous varactor multipliers. The resulting output power is much greater than has been previously reported at such a high frequency
Keywords :
III-V semiconductors; Schottky diodes; frequency multipliers; gallium arsenide; submillimetre wave diodes; submillimetre wave oscillators; varactors; 250 mW; 800 GHz; GaAs; GaAs Schottky diode; anode diameter; epitaxial doping density; frequency multiplier; high frequency applications; output power; solid-state local oscillator; varactor tripler; Doping; Electrons; Epitaxial layers; Frequency; Gallium arsenide; Local oscillators; Power generation; Schottky diodes; Solid state circuits; Varactors;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
