DocumentCode
857395
Title
Ultra-low reflectivity 1.5 μm semiconductor laser preamplifier
Author
Olsson, N.A. ; Oberg, M.G. ; Tzeng, L.D. ; Cella, Tommaso
Author_Institution
AT&T Bell Lab., Murray Hill., NJ
Volume
24
Issue
9
fYear
1988
fDate
4/28/1988 12:00:00 AM
Firstpage
569
Lastpage
570
Abstract
Reports travelling-wave 1.5 μm semiconductor laser amplifiers with very low gain ripple. The average facet reflectivity is less than 5×10-5 over a 170 Å interval. The minimum gain ripple is below the measurement accuracy, 0.2 dB, at 27.5 dB gain. When used as an optical preamplifier in a 4 Gbit/s receiver, a sensitivity of -34.3 dBm is achieved
Keywords
optical communication equipment; preamplifiers; semiconductor junction lasers; 1.5 micron; 27.5 dB; 4 Gbits/s; average facet reflectivity; gain ripple; measurement accuracy; semiconductor laser preamplifier; sensitivity; travelling-wave;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
19576
Link To Document