مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

857411

Title :

P-N junctions in lead telluride

Author :

Day, H.M. ; Macpherson, A.C.

Volume :

Issue :

fYear :

1963

Firstpage :

1362

Lastpage :

1363

Keywords :

Alloying; Capacitance-voltage characteristics; Dielectric materials; Electrostatics; Lead compounds; Neodymium; P-n junctions; Semiconductor diodes; Tunneling; Voltage;

fLanguage :

English

Journal_Title :

Proceedings of the IEEE

Publisher :

ieee

ISSN :

0018-9219

Type :

jour

DOI :

10.1109/PROC.1963.2573

Filename :

1444503

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=857411