Title :
Low threshold current GaAs/AlGaAs GRIN-SCH lasers grown by molecular beam epitaxy on Si3N4 masked substrates
Author :
Meier, H.P. ; van Gieson, E. ; Walter, W. ; Harder, C. ; Buchmann, P. ; Webb, D. ; Moser, A.
Author_Institution :
IBM Res. Div., Zurich Res. Lab., Switzerland
fDate :
9/1/1988 12:00:00 AM
Abstract :
High-performance single-quantum-well graded-refractive index separate confinement heterostructure (SQW GRINSCH) laser have been grown by molecular beam epitaxy on Si3N4 patterned GaAs (100) substrates. Lasers grown on stripe windows orientated in the [011] direction have optical waveguiding and current confinement supplied by facetting occurring during growth. Lasers fabricated on 10 μm wide Si 3N4 openings have threshold currents as low as 15 mA for a 500 μm-long cavity. The current density required to reach optical transparency is 144 A/cm2; an internal quantum efficiency of 81%, and a peak optical power of 70 mW per facet has been obtained. Device performance comparable to ridge lasers is observed in a self-aligned laser process
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; molecular beam epitaxial growth; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; (100) substrates; 15 mA; 500 micron; 70 mW; 81 percent; GRIN-SCH lasers; GaAs substrates; GaAs-AlGaAs; III-V semiconductors; MBE; Si3N4 masked substrates; Si3N4-GaAs; current confinement; facetting; graded-refractive index; internal quantum efficiency; molecular beam epitaxy; optical waveguiding; self-aligned laser process; semiconductor lasers; separate confinement heterostructure; single-quantum-well; stripe windows;
Journal_Title :
Electronics Letters
