High tolerance to radiation effects and low noise performance of ACUTE-a complementary bipolar SOI IC technology

Author

Pawlikiewicz, Adam H.

Author_Institution

United Technol. Microelectron. Center, Colorado Springs, CO, USA

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

761

Lastpage

768

Abstract

The 1/f noise performance of advanced complementary bipolar process from united technologies (ACUTE) is presented as a function of total dose, device geometry, and polarity as well as bias condition during irradiation. ACUTE´s noise performance is also compared to noise from devices built on a standard bipolar process. The measured noise spectrum is expressed in terms of Hooge´s constant-α_H which normalizes the “noisiness” of the device to its geometry and doping profiles and therefore allows one to compare different structures. The results indicate a significant radiation tolerance and superior low noise of ACUTE process as compared with standard bipolar technology

Keywords

1/f noise; BiCMOS integrated circuits; bipolar integrated circuits; gamma-ray effects; integrated circuit noise; radiation hardening (electronics); silicon-on-insulator; 1/f noise performance; ACUTE; Hooge´s constant; advanced complementary bipolar process; bias condition; complementary bipolar SOI IC technology; device geometry; doping profiles; low noise performance; noise spectrum; polarity; radiation effects; radiation tolerance; Bipolar integrated circuits; Cobalt; Doping profiles; Geometry; Helium; Integrated circuit noise; Measurement standards; Noise level; Noise measurement; Radiation effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.491526

Filename

491526