Realization of dot DFB lasers

Author

Griesinger, U.A. ; Schweizer, H. ; Kronmüller, S. ; Geiger, M. ; Ottenwälder, D. ; Scholz, F. ; Pilkuhn, M.H.

Author_Institution

4. Phys. Inst., Stuttgart Univ., Germany

Volume

8

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

587

Lastpage

589

Abstract

Dot lasers with first-, second- and third-order gain coupled distributed feedback (DFB) gratings have been realized by low damage dry etching in combination with wet chemical etching and epitaxial over-growth. This technique allows above room temperature (RT) operation of dot DFB lasers with dot diameters down to 85 nm. The laser spectra show the expected emission of gain coupled DFB lasers. Threshold current densities between 1.1 kA/cm/sup 2/ and 2.6 kA/cm/sup 2/ could be obtained depending on size of the active region. An improvement in T/sub 0/ could be demonstrated comparing 0-D/1-D/2-D lasers on the same wafer. Based on the dot grating geometry improvement of the side mode suppression ratio (SMSR) was observed for broad-area dot DFB lasers.

Keywords

diffraction gratings; distributed feedback lasers; electron beam lithography; etching; quantum well lasers; sputter etching; 85 nm; active region; broad-area dot DFB lasers; dot diameters; dot distributed feedback lasers; dot grating geometry; epitaxial over-growth; gain coupled DFB lasers; laser spectra; low damage dry etching; side mode suppression ratio; third-order gain coupled distributed feedback gratings; threshold current densities; wet chemical etching; Chemical lasers; Distributed feedback devices; Dry etching; Gratings; Laser feedback; Laser modes; Optical coupling; Temperature; Threshold current; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.491547

Filename

491547