Title :
Dynamic performance of current-sensing power MOSFETs
Author :
Grant, D. ; Pearce, Roger
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ.
fDate :
9/1/1988 12:00:00 AM
Abstract :
Errors in the output of current-sensing MOSFETs during switching are either perceived, due to measurement difficulties, or real, due to a change in sense ratio, as the device passes from the linear to the fully enhanced region. Transformer action within the device package also produces transients and limits bandwidth
Keywords :
electric current measurement; insulated gate field effect transistors; power transistors; switching; transient response; bandwidth limitation; current sense ratio change; current-sensing; device package; drain current; dynamic performance; measurement phenomena; output errors; power MOSFETs; separate source metallisation; switching; transformer effect; transients;
Journal_Title :
Electronics Letters
