Fabrication of high-packing-density vertical cavity surface-emitting laser arrays using selective oxidation

Author

Huffaker, D.L. ; Graham, L.A. ; Deppe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

8

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

596

Lastpage

598

Abstract

We describe the nearly-planar processing of two-dimensional vertical cavity laser arrays based on the selective conversion of AlAs to Al/sub x/O/sub y/. The individual lasers of 8×8 and 2×2 arrays are defined by native Al/sub x/O/sub y/ to achieve 4-μm square active regions on 12-μm center-to-center spacings. Interelement thermal coupling is characterized along with the optical mode structure.

Keywords

laser cavity resonators; laser modes; oxidation; semiconductor laser arrays; surface emitting lasers; AlAs; AlO; active regions; center-to-center spacings; fabrication; high-packing-density vertical cavity surface-emitting laser arrays; interelement thermal coupling; native Al/sub x/O/sub y/; nearly-planar processing; optical mode structure; selective conversion; selective oxidation; two-dimensional vertical cavity laser arrays; Etching; Gallium arsenide; Laser modes; Optical arrays; Optical device fabrication; Optical microscopy; Optical scattering; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.491550

Filename

491550