• DocumentCode
    857573
  • Title

    Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers

  • Author

    Weisser, S. ; Larkins, E.C. ; Czotscher, K. ; Benz, W. ; Daleiden, J. ; Esquivias, I. ; Fleissner, J. ; Ralston, J.D. ; Romero, B. ; Sah, R.E. ; Schonfelder, A. ; Rosenzweig, J.

  • Author_Institution
    Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
  • Volume
    8
  • Issue
    5
  • fYear
    1996
  • fDate
    5/1/1996 12:00:00 AM
  • Firstpage
    608
  • Lastpage
    610
  • Abstract
    We demonstrate record direct modulation bandwidths from MBE-grown In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures. Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6×130 μm2 devices at a bias current of 155 mA, which is the damping limit for this structure. We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of /spl sim/1.1 μm for these devices.
  • Keywords
    damping; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; molecular beam epitaxial growth; optical modulation; quantum well lasers; waveguide lasers; 1.1 mum; 155 mA; 40 GHz; In/sub 0.35/Ga/sub 0.65/As-GaAs; MBE-grown In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers; bias current; continuous wave direct modulation bandwidths; damping limit; damping-limited modulation bandwidths; growth temperatures; large-signal digital modulation; lasing wavelength; linewidth enhancement factors; lower cladding layers; measurement setup; short-cavity ridge waveguide lasers; threshold; undoped active regions; undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers; upper cladding layers; Bandwidth; Damping; Doping; Frequency; Gallium arsenide; Laser modes; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.491554
  • Filename
    491554