Title :
Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs
Author :
Poli, Stefano ; Pala, Marco G. ; Poiroux, Thierry
Author_Institution :
Res. Center on Electron. Syst., Univ. of Bologna, Bologna
fDate :
6/1/2009 12:00:00 AM
Abstract :
We study the influence of remote Coulomb scattering (RCS) due to trapped charges at the silicon oxide/high- kappa material interface on the electrical performances of silicon nanowire (Si-NW) FETs. We address a full quantum analysis based on the 3-D self-consistent solution of the Poisson-Schrdinger equation within the coupled mode-space non-equilibrium Green´s function (NEGF) formalism. We find that the RCS strongly affects the electrical performances of Si-NWs by increasing both the inverse subthreshold voltage slope and the I off current. RCS-limited mobility, which is mainly determined by screening effects, is found to have quasi-linear dependence on the 1-D channel electron density, and its dependence on fixed charge density and interface layer thickness is discussed.
Keywords :
Green´s function methods; Poisson equation; Schrodinger equation; elemental semiconductors; field effect transistors; nanowires; silicon; 1-D channel electron density; Poisson-Schrodinger equation; Si; coupled mode-space nonequilibrium Green function formalism; fixed charge density; full quantum treatment; interface layer thickness; remote Coulomb scattering; screening effects; silicon nanowire FET; silicon oxide/high-k material interface; trapped charges; Coupled mode analysis; Electron mobility; Electrostatics; FETs; MOSFETs; Nanostructures; Particle scattering; Poisson equations; Silicon; Voltage; Effective mobility; non-equilibrium Green´s function (NEGF); quasi-ballistic transport; remote Coulomb scattering (RCS); silicon nanowire (Si-NW); transfer characteristics;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2019380
