DocumentCode :
857756
Title :
1.31-1.55-μm phased-array demultiplexer on InP
Author :
Mestric, R. ; Bissessur, H. ; Martin, B. ; Pinquier, A.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Volume :
8
Issue :
5
fYear :
1996
fDate :
5/1/1996 12:00:00 AM
Firstpage :
638
Lastpage :
640
Abstract :
The first demultiplexers on InP at 1.31-1.55 μm based on low-order waveguide arrays have been fabricated and characterized. We show the calculated and measured spectral responses of two devices with 6 and 10 waveguides in the grating. The on-chip loss of the devices is 4.5 dB and the crosstalks are down to -25 dB. Thanks to their large bandwidth, the devices are polarization insensitive and no strong influence of the temperature is seen.
Keywords :
III-V semiconductors; arrays; demultiplexing equipment; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; optical crosstalk; optical fabrication; optical fibre communication; optical losses; optical receivers; optical testing; optical transmitters; optical waveguide components; optical waveguides; semiconductor heterojunctions; 1.31 to 1.55 mum; 4.5 dB; InGaAsP-InP; InP; bandwidth; characterization; crosstalks; demultiplexers; fabrication; grating; low-order waveguide arrays; on-chip loss; phased-array demultiplexer; polarization insensitive devices; spectral responses; Bandwidth; Crosstalk; Etching; Indium phosphide; Noise measurement; Optical fiber polarization; Optical scattering; Tellurium; Temperature; Wavelength measurement;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.491564
Filename :
491564
Link To Document :
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