Superconducting YBaCuO thin films on silicon with barium silicate buffer layers

Author

Belousov, I.V. ; Ruban, A.I. ; Il´chenko, V.V. ; Kuznetsov, G.V. ; Strikha, V.I.

Author_Institution

Inst. of Metal Phys., Acad. of Sci., Kiev, Ukraine

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1510

Lastpage

1512

Abstract

The diffusion barrier capabilities of thin layers of barium silicate, which are determined by the interaction between the YBaCuO compound and Si substrate, have been investigated. Analysis of the films´ elemental depth distributions show that their interaction with the substrates result in the formation of a Ba/sub 2/SiO/sub 4/ layer. The superconducting characteristic of YBaCuO films obtained on barium silicate, in terms of transition width and T/sub c0/, are significantly improved compared to those without buffering.<>

Keywords

barium compounds; chemical interdiffusion; high-temperature superconductors; sputter deposition; superconducting thin films; superconducting transition temperature; surface diffusion; yttrium compounds; Ba/sub 2/SiO/sub 4/ buffer layer; Si; Si substrate; YBaCuO thin films; YBaCuO-Ba/sub 2/SiO/sub 4/; depth distribution; diffusion barrier capabilities; superconducting critical temperature; transition width; Buffer layers; High temperature superconductors; Semiconductor films; Semiconductor thin films; Silicon; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting thin films; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.402858

Filename

402858