Title :
Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications
Author :
Xie, K. ; Zhao, J.H. ; Shi, Y. ; Lee, H. ; Olsen, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
Resonant cavity enhanced photodetectors based on GaInAsSb-AlAsSb grown by MBE have been successfully fabricated and characterized to operate at near 2 μm wavelength range. By incorporating a 10-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, strong cavity enhancement of photoresponse and post-growth selectivity of the resonant wavelength have been realized. The photodetectors have shown record setting room temperature performance with a maximum quantum efficiency of /spl eta/=85%, a peak responsivity of R=1.3 A/W and a detectivity D* of 1.35×10/sup 10/ cm Hz12/ W/sup -1/ at -0.5-V bias at resonant wavelength.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; optical resonators; photodetectors; semiconductor growth; 2 micron; 85 percent; GaInAsSb-AlAsSb; MBE growth; detectivity; lattice matched quarter wavelength reflector; mid-IR region; quantum efficiency; resonant cavity enhanced photodetector; responsivity; room temperature operation; selectivity; Infrared detectors; Infrared spectra; Lattices; Optical buffering; Optical fiber communication; PIN photodiodes; Photodetectors; Remote monitoring; Resonance; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
