DocumentCode :
858
Title :
InGaN/GaN Quantum Dot Red (\\lambda =630~{\\rm nm}) Laser
Author :
Frost, Thomas ; Banerjee, Adrish ; Kai Sun ; Shun Lien Chuang ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume :
49
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
923
Lastpage :
931
Abstract :
Lasers emitting in the 600 nm wavelength range have gained attention for a number of important applications, including optical information processing, plastic fiber communication systems, optical storage, and full color (RGB) laser displays and laser projectors. Visible lasers are currently realized with GaN-based heterostructures having InGaN/GaN quantum wells as the gain media. The performance of these devices, particularly at longer wavelengths, is limited by materials inhomogeneity and effects related to a large strain-induced polarization in the quantum wells. A laser emitting in the red (λ ~ 630 nm) has not been realized. Here, we demonstrate lasers which emit at 630 nm, the longest wavelength achieved with the nitride system, by incorporating InGaN/GaN self-organized quantum dots as the gain media. Strain relaxation during dot formation results in reduced polarization fields and consequently low threshold current density, Jth=2.5 kA/cm2, small blue shift of the emission peak, very weak temperature dependenc eof Jth (T0=236 K), and linearly TE polarized output.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; light polarisation; quantum dot lasers; semiconductor quantum dots; spectral line shift; wide band gap semiconductors; InGaN-GaN; RGB displays; blue shift; fiber communication systems; full color laser displays; gain media; laser projectors; material inhomogeneity; optical information processing; optical storage; quantum dot red laser; quantum wells; self-organized quantum dots; strain relaxation; strain-induced polarization; temperature 236 K; threshold current density; visible lasers; wavelength 630 nm; weak temperature dependence; Gallium nitride; Measurement by laser beam; Quantum dot lasers; Quantum well lasers; Temperature measurement; Threshold current; Waveguide lasers; Differential gain; InGaN/GaN; high temperature stability laser; molecular beam epitaxy; quantum dot; red-emitting laser;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2013.2281062
Filename :
6590022
Link To Document :
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