Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer

Author

Müller, Robert ; Krebs, Christoph ; Goux, Ludovic ; Wouters, Dirk J. ; Genoe, Jan ; Heremans, Paul ; Spiga, Sabina ; Fanciulli, Marco

Author_Institution

Interuniversity Microelectron. Center, Leuven

Volume

30

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

620

Lastpage

622

Abstract

In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides are incorporated as dedicated switching layer (SL) in a bottom electrodeoxideCuTCNQtop electrode configuration. The bottom electrode was Pt as well as n⁺Si. As oxide SL, we used Al₂O₃ , HfO₂, ZrO₂, and SiO₂. Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.

Keywords

aluminium compounds; bipolar integrated circuits; copper compounds; hafnium compounds; integrated memory circuits; silicon compounds; zirconium compounds; Al₂O₃; CuTCNQ-based memory cells; HfO₂; SiO₂; ZrO₂; bipolar resistive electrical switching; bottom electrode configuration; conductive channels; dedicated switching layer; oxide configuration; top electrode configuration; Copper compounds; electrochemical devices; electronic switching systems; memories; organic compounds;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2020521

Filename

4915750