Title :
Growth and Transport Studies in M/I/p-SC Magnetic Tunnel Diodes Containing Different Tunnel Barrier Materials
Author :
Agarwal, K.C. ; Saito, H. ; Yuasa, S. ; Ando, K.
Author_Institution :
Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
fDate :
6/1/2007 12:00:00 AM
Abstract :
Metal-insulator-semiconductor (MIS) magnetic tunnel diodes consisting of ferromagnetic metal (Fe) and semiconductor (Ga1-xMnxAs) electrodes with various tunnel barrier materials (AlAs, GaAs, ZnTe, and MgO) were fabricated. A clear tunneling magnetoresistance (TMR) effect was observed in all the samples. Magnetoresistance ratios at 2 K were observed to be 38% for AlAs, 11% for GaAs, 8% for ZnTe, and ~1% for MgO. Growth and transport studies strongly suggested that the small lattice mismatch between the barrier and the electrode materials and Mn-free interfaces are important for have significant influence on developing high-quality MIS magnetic tunnel diodes.
Keywords :
III-V semiconductors; MIS devices; aluminium compounds; ferromagnetic materials; gallium arsenide; iron; magnesium compounds; magnetoelectronics; manganese compounds; semimagnetic semiconductors; tunnel diodes; tunnelling magnetoresistance; zinc compounds; 2 K; Fe-Ga1-xMnxAs-AlAs; Fe-Ga1-xMnxAs-GaAs; Fe-Ga1-xMnxAs-MgO; Fe-Ga1-xMnxAs-ZnTe; MIS diodes; ferromagnetic materials; lattice mismatch; metal-insulator-semiconductor magnetic tunnel diodes; semiconductor electrodes; tunnel barrier materials; tunneling magnetoresistance; Electrodes; Gallium arsenide; Iron; Magnetic materials; Magnetic semiconductors; Metal-insulator structures; Semiconductor diodes; Semiconductor materials; Tunneling magnetoresistance; Zinc compounds; Ferromagnetic semiconductor; metal–semiconductor hybrid structures; spin-dependent transport;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2007.894015
