DocumentCode :
85810
Title :
Preparation and Luminescence Properties of {\\rm Bi}_{4}{\\rm Si}_{3}{\\rm O}_{12}!:!{\\rm Zn} Powders
Author :
Qinhua Wei ; Guanghui Liu ; Zhenzhen Zhou ; Hua Yang ; Jiandong Zhuang ; Qian Liu
Author_Institution :
State Key Lab. of High Performance Ceramics & Superfine Microstructure, Shanghai Inst. of Ceramics, Shanghai, China
Volume :
61
Issue :
1
fYear :
2014
fDate :
Feb. 2014
Firstpage :
328
Lastpage :
331
Abstract :
Bi4Si3O12:Zn2+(BSO:Zn) polycrystalline powders were successfully prepared by sol-gel method. X-ray diffraction measurements confirm that the Zn2+-doped materials are all monophasic solid solution powders. The influences of doping concentration on the photoluminescence and radioluminescence characteristics have been investigated and discussed. The Zn2+ doped material shows a better light yield than that of undoped material under X-ray excitation. The fluorescence decay time of the optimal material, excited by UV has been aslso measured. The results show that the Zn2+ ion doping has a positive effect on the light yield of BSO. But the crystal growth and characterizations of BSO:Zn polycrystalline powders prepared deserve further investigations.
Keywords :
X-ray diffraction; bismuth compounds; crystal growth from gel; doping profiles; fluorescence; photoluminescence; powders; sol-gel processing; solid solutions; zinc; Bi4Si3O12:Zn; UV excitation; X-ray diffraction; crystal growth; doping concentration; fluorescence decay time; ion doping; light yield; luminescence properties; monophasic solid solution powders; photoluminescence; polycrystalline powders; radioluminescence; sol-gel method; Crystals; Doping; Ions; Luminescence; Phosphors; Powders; Zinc; ${rm Bi}_{4}{rm Si}_{3}{rm O}_{12}$; ${rm Zn}^{2+}$ doping; decay time; enhanced luminescence; sol-gel method;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2013.2272833
Filename :
6581928
Link To Document :
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