Title :
Low coupling losses between InP/InGaAsP optical amplifiers and monolithically integrated waveguides
Author :
Brenner, T. ; Gini, E. ; Melchior, H.
Author_Institution :
Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Over 90% coupling efficiencies were achieved for optical amplifiers integrated with butt-jointed waveguides operating at 1.3 mu m. The measurements were performed passively at lambda =1.53 mu m. The optical amplifiers and the waveguides in InP/InGaAsP were grown in two stages with low pressure metal organic vapor phase epitaxy (LP-MOVPE). Stop-etch layers and optimized design eased fabrication tolerances.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical losses; optical waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 90 percent; IR; InP-InGaAsP; LP-MOVPE; butt-jointed waveguides; coupling efficiencies; fabrication tolerances; integrated optoelectronics; laser diodes; low coupling losses; low pressure metal organic vapor phase epitaxy; monolithically integrated waveguides; optical amplifiers; semiconductors; stop-etch layers; Epitaxial growth; Indium phosphide; Integrated optics; Optical amplifiers; Optical coupling; Optical losses; Optical waveguides; Performance evaluation; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
