DocumentCode :
858873
Title :
A new "active" predistorter with high gain and programmable gain and phase characteristics using cascode-FET structures
Author :
Kim, Junghyun ; Jeon, Moon-Suk ; Lee, Jaehak ; Kwon, Youngwoo
Author_Institution :
Center for Three- Dimensional Millimeter-Wave Integrated Syst., Seoul Nat. Univ., South Korea
Volume :
50
Issue :
11
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
2459
Lastpage :
2466
Abstract :
A MMIC-compatible miniaturized "active" predistorter using cascode FET structures is presented. The predistorter has added functionality of gain, as well as programmable gain and phase variation characteristics, which are required to compensate or the nonlinear distortion of a wide range of power amplifiers (PAs). Thanks to the inherent gain of the predistorter, a need for an additional buffer amplifier is eliminated. Furthermore, it can eventually replace the first-stage amplifier in the multistage PAs, making this approach well suited to MMIC implementation. A simple analysis is performed to understand the phase variation mechanisms in the proposed predistorter and to identify the dominant sources of phase variation. To demonstrate the general usefulness of this predistorter, the cascode predistorter was applied to linearize watt-level MMIC amplifiers for CDMA handset applications, as well as 30 W high power amplifiers for base-station applications. Adjacent channel power ratio (ACPR) improvement of 3-5 dB was achieved with off-chip predistorter when applied to 0.9 W monolithic amplifiers. The predistorter was also integrated with a 1.6 W MMIC PA on a single chip, replacing the first-stage transistor of the amplifier.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; active networks; compensation; gain control; gallium arsenide; linearisation techniques; nonlinear distortion; phase control; programmable circuits; 0.9 W; 1.6 W; 30 W; ACPR improvement; CDMA handset applications; GaAs; GaAs PHEMT technology; MMIC implementation; MMIC power amplifier; MMIC-compatible predistorter; adjacent channel power ratio improvement; base-station high power amplifier; cascode FET structures; code-division multiple-access applications; miniaturized active predistorter; monolithic amplifiers; monolithic microwave IC; multistage power amplifiers; nonlinear distortion compensation; programmable gain variation characteristics; programmable phase variation characteristics; Content addressable storage; FETs; High power amplifiers; Linearity; Linearization techniques; MMICs; Multiaccess communication; Nonlinear distortion; Power amplifiers; Predistortion;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2002.804517
Filename :
1046016
Link To Document :
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