DocumentCode :
858886
Title :
On-axis DC sputtered YBa/sub 2/Cu/sub 3/O/sub 7/(-x) films up to 2" in diameter for microwave antenna arrays
Author :
Muller, G. ; Aschermann, B. ; Chaloupka, H. ; Diete, W. ; Getta, M. ; Hein, Matthias ; Hensen, S. ; Hill, F. ; Lenkens, M. ; Orbach-Werbig, S. ; Patzelt, T. ; Piel, H. ; Rembesa, J. ; Schlick, H. ; Unshelm, T. ; Wagner, R.
Author_Institution :
Inst. fur Materialwissenschaften, Wuppertal Univ., Germany
Volume :
5
Issue :
2
fYear :
1995
fDate :
6/1/1995 12:00:00 AM
Firstpage :
1729
Lastpage :
1732
Abstract :
We have extended the planar on-axis DC sputtering process under high oxygen pressure (1-4 mbar) to the epitaxial growth of YBa/sub 2/Cu/sub 3/O/sub 7-x/ films on LaAlO/sub 3/ substrates up to 2" in diameter without scanning. The stability of the accordingly large plasma turned out to depend critically on the homogeneity of the stoichiometric target and its bonding to the water-cooled sputtering cathode. The radiation-shielded heater plate provided temperature uniformity of /spl plusmn/4K at 890/spl deg/C to the 2" substrates. The quality of the large unpatterned films was controlled by inductive as well as by new microwave test systems based on niobium choke-flange or sapphire-loaded cavities. These have been designed for highly sensitive scanning measurements of the surface resistance R/sub s/ at 87 GHz and high power microwave tests at 20 GHz, respectively. Homogeneous low R/sub s/ values have been achieved on the large films up to surface fields of 5 mT at 77 K. A frequency diplexer at 5 GHz for antenna arrays was designed with lumped elements and patterned from a 1" film by means of photolithography, ion milling and wet etching. Its measured performance agrees well with numerical simulations.<>
Keywords :
barium compounds; critical current density (superconductivity); electron device manufacture; etching; high-temperature superconductors; ion beam applications; microwave antenna arrays; multiplexing equipment; photolithography; sputter deposition; superconducting epitaxial layers; superconducting microwave devices; superconducting transition temperature; surface conductivity; vapour phase epitaxial growth; yttrium compounds; 1 inch; 1 to 4 mbar; 2 inch; 20 GHz; 5 GHz; 77 K; 87 GHz; 890 C; LaAlO/sub 3/; Nb choke-flange cavity; YBa/sub 2/Cu/sub 3/O/sub 7/; YBa/sub 2/Cu/sub 3/O/sub 7/(-x) films; epitaxial growth; frequency diplexer; high O/sub 2/ pressure; high power microwave tests; highly sensitive scanning measurements; inductive test system; ion milling; lumped elements; microwave antenna arrays; numerical simulation; patterning; photolithography; planar on-axis DC sputtering; plasma stability; radiation-shielded heater plate; sapphire-loaded cavity; stoichiometric target homogeneity; surface resistance; temperature uniformity; unpatterned film quality; water-cooled sputtering cathode; wet etching; Bonding; Cathodes; Electromagnetic heating; Epitaxial growth; Plasma applications; Plasma stability; Plasma temperature; Sputtering; Substrates; Surface resistance;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.402911
Filename :
402911
Link To Document :
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