Title :
Wideband direct-coupled differential amplifiers utilising AlGaAs/GaAs HBTs
Author :
Nakajima, H. ; Yamauchi, Y. ; Ishibashi, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
9/1/1988 12:00:00 AM
Abstract :
Wideband direct-coupled differential amplifiers utilising AlGaAl/GaAs HBTs are presented. In the new circuit, input and output voltages of 0 V are obtained in a balanced condition, which allows direct cascade connections of the amplifiers. Superior amplifier performance of 20 dB gain with a 9 GHz bandwidth is obtained
Keywords :
DC amplifiers; III-V semiconductors; aluminium compounds; bipolar integrated circuits; differential amplifiers; gallium arsenide; microwave amplifiers; microwave integrated circuits; wideband amplifiers; 0 to 9 GHz; 20 dB; 9 GHz; AlGaAs-GaAs transistors; HBTs; MMIC; SHF; amplifier performance; bandwidth; differential amplifiers; direct cascade connections; direct coupled amplifiers; gain; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers;
Journal_Title :
Electronics Letters
