A spline large-signal FET model based on bias-dependent pulsed I-V measurement

Author

Koh, Kyoungmin ; Park, Hyun-Min ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea

Volume

50

Issue

11

fYear

2002

fDate

11/1/2002 12:00:00 AM

Firstpage

2598

Lastpage

2603

Abstract

A spline large-signal FET model is presented. This includes a quiescent bias dependency to predict nonlinear dynamic behavior of FETs in which self-heating and trap effects are present. The intrinsic device of the model represented by a parallel connection of current and charge sources and the model parameters are extracted from bias-dependent pulsed I-Vs and S-parameters, respectively. The validity of the model is demonstrated by comparing the simulated small-signal S-parameters over a wide bias range with measured data. Nonlinear behaviors of FETs such as P_in - P_out, third-order intermodulation distortion, and efficiency are also compared.

Keywords

S-parameters; Schottky gate field effect transistors; equivalent circuits; intermodulation distortion; semiconductor device models; splines (mathematics); MESFET; S-parameters; bias-dependent pulsed I-V measurement; efficiency; isothermal conditions; isotrap conditions; large-signal equivalent circuit; model parameters; nonlinear dynamic behavior; quiescent bias dependency; self-heating effects; spline large-signal FET model; table-based model; third-order intermodulation distortion; trap effects; wide bias range; Circuit synthesis; Data mining; Distortion measurement; FETs; Intermodulation distortion; MESFETs; Predictive models; Pulse measurements; Spline; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.804509

Filename

1046035