Fabrication and Characterization of Co-Ferrite Thin Films for a Ferromagnetic Barrier in a Spin-Filtering Device Operating at Room Temperature

Author

Goto, R. ; Takahashi, Y.K. ; Tezuka, N. ; Inomata, K. ; Sugimoto, S. ; Hono, K.

Author_Institution

Dept. of Mater. Sci., Tohoku Univ., Sendai

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

2797

Lastpage

2799

Abstract

For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe₂ surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe₂/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed

Keywords

annealing; cobalt compounds; ferrites; ferromagnetic materials; magnetic moments; magnetic multilayers; magnetic thin film devices; magnetoelectronics; oxidation; plasma materials processing; 293 to 298 K; Co ferrite thin films; CoFe₂; CoFe₂O₄-MgO-CoFe₂; MgO; MgO (001) single crystal substrates; ferromagnetic barrier; magnetic moments; plasma oxidation; postannealing; room temperature operation; spin filtering junctions; Electrodes; Electrons; Fabrication; Magnetic field measurement; Magnetic tunneling; Plasma temperature; Polarization; Sputtering; Substrates; Thin film devices; Co-ferrite; spin-filtering devices; spin-polarized current sources; spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.893696

Filename

4202738