Title :
Fabrication and characterisation of long-wavelength, GaInAs/AlGaInAs/InP modified-MQW lasers
Author :
Williams, P.J. ; Robbins, D.J. ; Reid, T.J. ; Davies, J.L. ; Carter, A.C.
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
Abstract :
Room-temperature operation of GaInAs/AlGaInAs/InP M-MQW lasers grown by low-pressure MOVPE is described for the first time. Threshold current densities were as low as 1.9 kA cm-2 with emission wavelengths of 1.59 mu m.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; 1.59 micron; GaInAs-AlGaInAs-InP; characterisation; emission wavelengths; fabrication; long-wavelength; low-pressure MOVPE; modified-MQW lasers; room temperature operation; semiconductors; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890004
