Title :
Large signal mwSPICE model of DMOS transistor
Author :
Conn, D.R. ; Smith, P.M.
Author_Institution :
McMaster Univ., Hamilton, Ont., Canada
Abstract :
A new large signal mwSPICE model is presented for the DMOS device. The model describes the device accurately in all regions of operation, and can be scaled with respect to gate width and length. Predicted DC, small and large signal RF performances are in good agreement with measured values.
Keywords :
insulated gate field effect transistors; solid-state microwave devices; DC modelling; DMOS device; DMOS transistor; all regions of operation; gate width; large signal RF performances; large signal model; scaling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890006
