Title :
Silicon permeable base transistors fabricated by selective epitaxial growth
Author :
Gruhle, A. ; Beneking, H.
Author_Institution :
Inst. of Semicond. Electron., Aachen, West Germany
Abstract :
A new type of silicon PBT uses lateral selective low-pressure vapour-phase epitaxy to grow ridges with mushroom-like cross-sections leading to self-aligned gate and drain electrodes. Advantages are the lack of any etching damage encountered with etched-groove PBTs and high-temperature process compatibility. First experimental devices with bar widths of 1 mu m exhibited transconductances of 7 mS/mm.
Keywords :
elemental semiconductors; semiconductor technology; silicon; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; PBT; Si transistors; bar widths; etch damage free; experimental devices; lateral selective epitaxial low pressure VPE; microwave PBTs; mushroom-like cross-sections; permeable base transistors; selective epitaxial growth; self-aligned gate; semiconductors; transconductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890010
