Title :
Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Author :
Doldissen, W. ; Fiedler, Fine ; Kaiser, Rene ; Morl, L.
Author_Institution :
Heinrich Hertz Inst. fur Nachrichtentech. Berlin GmbH, West Germany
Abstract :
A pair of GaInAs photodiodes was integrated to the output waveguides of an optical Y-branch. Light was butt coupled to the photodetective zone which was formed by GaInAs LPE growth refilling deep etched holes. Total light conversion with more than 90% internal quantum efficiency at 1.55 mu m wavelength was achieved. The best diodes exhibited dark currents of 1 nA at -10 V bias voltage.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; optical communication equipment; optical waveguides; photodiodes; semiconductor technology; substrates; -10 V; 1 nA; 1.55 micron; 90 percent; GaInAs LPE growth refilling deep etched holes; GaInAs photodiodes; InP substrate; OEICs; Y-branched optical waveguides; bias voltage; butt coupled photodiodes; dark currents; internal quantum efficiency; optical Y-branch; photodetective zone; photodiodes integration to waveguides; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890026
