• DocumentCode
    859388
  • Title

    Monolithic InP/GaInAs pinFET receiver using MOMBE-grown crystal

  • Author

    Akahori, Y. ; Hata, Satoshi ; Ikeda, Makoto ; Yuda, M. ; Kawaguchi, Yuki ; Uehara, Satoshi

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    25
  • Issue
    1
  • fYear
    1989
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    An InP/GaInAs monolithic pinFET is fabricated using MOMBE crystal growth and Be ion implantation techniques. The MOMBE crystal growth technique is shown to be adaptable to the versatile requirements of the receiver crystal. The epigrowth together with the Be ion implantation provides a promising OEIC fabrication technique. The pinFET operated with 1.3 GHz bandwidth and 6 dB gain.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; ion implantation; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; receivers; 1.3 GHz; 6 dB; Be ion implantation; InP-GaInAs; MOMBE crystal growth technique; MOMBE-grown crystal; OEIC fabrication technique; bandwidth; epigrowth; gain; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890027
  • Filename
    19654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=859388