Title :
GaInAsP/InP heterojunction bipolar transistors with a double layer base
Author :
Ohishi, T. ; Ohtsuka, K. ; Matsui, Takashi ; Ogata, Hiroaki
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
GaInAsP/InP heterojunction bipolar transistors with a double layer base were demonstrated with a direct current gain of 1100 at a collector current density of 110 A/cm2. In these particular devices the minority carriers in the base can be transported not only by diffusion but also by drifting.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; GaInAsP-InP; HBT; collector current density; current gain; double layer base; heterojunction bipolar transistors; minority carrier drifting; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890030
